2SA1209 transistor equivalent, power transistor.
*Designed for high-voltage switching and AF 100W predriver
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
*Good Linearity of hFE
*High Switching Speed
*Complement to Type 2SC2911
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS.
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